Daisuke
Hojo, Ph. D.
Current Address:
(Office)
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Advanced Institute for Materials Research, Tohoku
University 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi, 980-8577,
JAPAN |
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Phone # : |
+81-22-217-5631 |
Fax # : |
+81-22-217-5631 |
E-mail : |
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General
information:
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Date of birth : |
12
November 1973 |
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Place of birth
: |
Hokkaido,
Japan |
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Nationality : |
Japanese |
Education:
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1992-1996: |
College
of Natural Sciences at First Cluster of Colleges of University of Tsukuba Awarded
the degree of BS in Science for a thesis entitled “The
calculation of Lamb’s shift in hydrogen atoms using Relativistic Quantum
Field Theory” Work
supervised by Professor Yang |
|
1996-1998: |
Master
Program in Science and Engineering at University of Tsukuba Awarded
the degree of MS in Science for a thesis entitled “Basic
research on scintillation tile/glass fiber system of hadron calorie meter for
Japan Liner Collider” Work
supervised by Professor Kim |
|
2000-2003: |
Doctoral
Program in Engineering at University of Tsukuba Awarded
the degree of Ph. D. in engineering for a thesis entitled “The
formation of atomic step/terrace structure on silicon surfaces and the
quantitative roughness evaluation of silicon surfaces” Work
supervised by Professor Yamabe |
Research and Professional
experiences:
|
1999-2000: |
Part
time research assistant at Texas Instruments Japan. |
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2000-2003: |
Doctoral
research in Department of applied physics at University of Tsukuba. Work
supervised by Professor Yamabe. 1.
Studied on thermal oxidation mechanism by atomic
scale observation of SiO2/Si(111) interfaces with Atomic Force
Microscopy. 2.
Studied on Si(111) surface roughness control using
wet etching and thermal processes. |
|
2003-2005: |
AIST
Research Fellow (post-doc.) in Advanced Semiconductor Research Center, National
Institute of Advanced Industrial Science and Technology (AIST), Japan. Work
supervised by Dr. Yasuda. 1.
Development of automated vapor-liquid hybrid
deposition system (a modified atomic layer deposition system, where
hydrolysis is carried out in liquid water.). 2.
Evaluation of transistors incorporating high-k
dielectric (hafnium and hafnium silicates) films. 3.
Studied on the optical properties of high-k
dielectric films with Vacuum ultraviolet spectroscopic ellipsometry. |
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2005-2007: |
Research
Fellow (Post-doc.) in Department of Chemical and Biomolecular Engineering at
North Carolina State University. Work
supervised by Prof. Parsons. 1.
Super critical fluid CO2 processing for
metal and metal oxides deposition on solid surfaces and polymers. 2.
Impregnation of Pd and Ag particles into the
cotton fibers to develop unique properties, such as optical or conductivity. 3.
Replication of 3 dimensional structure by
conformal coating from atomic layer deposition. |
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2007-2008: |
Post-doc.
in Institute of Multidisciplinary Research for Advanced Materials, Tohoku
University. Work
supervised by Prof. Adschiri. |
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2008 -Present : |
Assistant
Professor in Advanced Institute for Materials Research, Tohoku University. 1.
Studied on conformal
coatings of metal oxide from Atomic Layer Deposition on convoluted 3D
surfaces. 2.
2D and 3D self
assembly of catalytic nanoparticles. |
Technical Experiences:
|
Thin
film deposition technology |
ü
Vapor-liquid
hybrid deposition (modified atomic layer deposition) for high-k
dielectrics (Hafnium silicates). ü
Vacuum evaporation. ü
Sputter (TaN for gate metal of MISFET). ü
Chemical fluid
deposition of metal and metal oxides (Pd, Ag, Al2O3). ü
Catalyst
assisted Chemical Vapor Deposition of Carbon nanotubes (CNTs). ü
Atomic Layer Deposition of Al2O3. ü
Electron beam evaporation of metal and metal
oxides (Fe, Co, Ni, Al2O3). ü
3 Dimensional
replication from conformal coating with Atomic Layer Deposition on textile
templates. |
|
Nano-particle
technology |
ü
Self-assembly
of nanocrystals as thin films. ü
Impregnation of metal nanoparticles into porous
structures (polymers, textiles) from chemical fluid technique. |
|
Device
technology |
ü
Optical lithography. ü
Reactive ion etching. ü
Electrical
characteristics for MIScap. and MISFET. ü
Internal Photo electron Emission measurement. |
|
Evaluation
technique |
ü
Atomic Force
Microscopy. ü
Spectroscopic ellipsometry. ü
Vacuum ultraviolet spectroscopic ellipsometry. ü
X-ray photoelectron spectroscopy. ü
Auger electron spectroscopy. ü
Scanning electron microscopy. ü
Fourier transform infrared spectroscopy. |
|
Other
technique |
National
Instrument, LabVIEW programming. |
Research
Interests:
ü Thin film deposition from atomic layer deposition onto 3D tortuous
structures.
ü Replication of template structure with thin coating
films for optical and catalytic application
ü Construction of novel nano-structure by coating and impregnation.
ü Self-assembly of nanocrystals as thin films.
ü Nanotechnology-based device development.
Membership of Academic
Societies:
The
Japan Society of Applied Physics (JSAP)
Materials
Research Society (MRS)
The Society of Chemical Engineering, Japan
(SCEJ)
Publications:
Thin
film deposition
1.
G.
Scarel, G. K. Hyde, D. Hojo,
and G. N. Parsons
“Berreman effect
in infrared adsorption spectroscopy of ionic oxide coatings formed by atomic
layer deposition on three-dimensional structures”
J.
Appl. Phys. 104, 094314 (2008).
2.
Q.
Peng, J. C. Spagnola, D. Hojo,
K.-J. Park, and G. N. Parsons
“Conformal Metal
Oxide Coatings on Nanotubes by Direct Low-Temperature Metal-Organic Pyrolysis
in Supercritical Carbon Dioxide”
J.
Vac. Sci. Technol. B
26, 978 (2008).
3.
Q. Peng, D. Hojo,
K.-J. Park, and G. N. Parsons
Thin Solid Films 516, 4997 (2008).
4.
*D. Hojo, Y. Xuan, and T. Yasuda
“Development of
automated vapor-liquid hybrid deposition (VALID) system to form high-k
dielectrics”
Chemical Vapor
Deposition
12 214 (2006).
5.
*D. Hojo, Y. Xuan, and T. Yasuda
“Growth of HfSiOx
films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC4H9)4
multilayer adsorption”
Jpn. J. Appl.
Phys.
Pt2 Letter 44 L1433 (2005).
6.
Y.
Xuan, D. Hojo, and T. Yasuda
“Well-behaved
MOS Capacitor Characteristics of Hafnium Silicate Films Deposited in ALD Mode
by Vapor-Liquid Hybrid Deposition Process”
Appl. Phys.
Lett.
84 5097 (2004).
Nanoparticles and
nanowires
1.
S.
D. Gittard, D. Hojo, G. K.
Hyde, R. J. Narayan, G. Scarel, and G. N. Parsons
“Antifungal
textiles formed using silver deposition in supercritical carbondioxide”
Accepted to J. Mater. Eng. Perform.
2.
N.
Tokuda, H. Watanabe, D. Hojo,
S. Yamasaki, K. Miki, and K. Yamabe
“Fabrication of
Cu nanowires along atomic step edge lines on Si(111) substrates”
Appl. Surf. Sci. 237 528 (2004).
3.
N.
Tokuda, D. Hojo, S. Yamasaki,
K. Miki, and K. Yamabe
“Selective
Growth of Cu Nanowires on Si(111) Substrates”
Jpn. J. Appl.
Phys.
Pt2 Letter 42 L1210 (2003).
Silicon surfaces and interfaces
1.
*D. Hojo, N. Tokuda, and K.
Yamabe
“Direct observation of Two-Dimensional growth at SiO2/Si(111) interface”
Thin Solid Films 515 7892 (2007).
2.
*D. Hojo, N. Tokuda, and K.
Yamabe
“Effect of SiO2
Fence on Atomic Step Flow in Chemical Etching of Si Surface”
Jpn. J. Appl.
Phys.
Pt2 Letter 42 L561 (2003).
3.
*D. Hojo, H. Ooeda, N. Tokuda,
and K. Yamabe
“Topography
Change due to Multilayer Oxidation at SiO2/Si(111) Interfaces”
Jpn. J. Appl.
Phys.
42 1903 (2003).
4.
*D. Hojo, N. Tokuda, and K.
Yamabe
“Atomic
Topography Change of SiO2/Si Interfaces during Thermal Oxidation”
Jpn. J. Appl.
Phys.
Pt2 Letter 41 L505 (2002).
5.
M.
Murata, N. Tokuda, D. Hojo,
and K. Yamabe
“Leakage current
distribution in ultrathin oxide on silicone surface with step/terrace”
Thin Solid Films 414 56 (2002).
6.
N.
Tokuda, M. Murata, D. Hojo,
and K. Yamabe
“SiO2 Surface
and SiO2/Si Interface Topography Change by Thermal Oxidation”
Jpn. J. Appl.
Phys.
40 4763 (2001).
Proceedings:
D. Hojo, G. K. Hyde, J.
C. Spagnola, and G. N. Parsons
“3-Dimensional
Al2O3 Fiber Networks using Low Temperature Atomic Layer Deposition on a Cotton
Template”
2007MRSFall Meeting,
1054-FF03-08.
Presentations
(International Conferences):
1.
D. Hojo, G. K. Hyde, J.
Spagnola, and G. N. Parsons
“3-Dimensional
Al2O3 Fiber Networks using Low Temperature Atomic Layer Deposition
on a Cotton Template”
2007 MRS Fall Meeting, Boston
Nov. 2007.
2.
D. Hojo, Y. Xuan, and T. Yasuda
“Liquid-Phase
Hydrolysis of Hf(OC4H9)4/Si(OC2H5)4 Multilayers for HfSiOx Growth by the VALID
Process”
The ALD 2006 conference at Seoul,
South Korea July 2006.
3.
D. Hojo, Y. Xuan, and
T. Yasuda
“Development of
Automated Vapor-Liquid Hybrid Deposition (VALID) System for High-k Dielectrics
Formation”
The ALD 2004 conference at
University of Helsinki, Finland Aug. 2004.
4.
D. Hojo, N. Tokuda, and
K. Yamabe
“Topographic
change at SiO2/Si interface with multilayer oxidation for various temperatures”
The 201st Meeting of
the Electrochemical Society at Salt Lake City, U.S. Oct. 2002.
5.
D. Hojo, N. Tokuda, and
K. Yamabe
“Topographic
change with Multilayer Oxidation at SiO2/Si interfaces”
Solid State Devices and
Materials, Nagoya, Japan Sept. 2002.
6.
D. Hojo, N. Tokuda, and
K. Yamabe
“Increasing
roughness of SiO2/Si interface during Thermal Oxidation”
International Workshop on Gate
Insulator 2001 at Tokyo, Japan Nov. 2001.
7.
M.
Murata, N. Tokuda, D. Hojo,
and K. Yamabe
“Two dimensional
Distribution of Leakage Current in Ultrathin Oxide on Stepped Si Surface”
The 198th Meeting of
the Electrochemical Society at Phoenix U.S. Oct. 2000.
Presentations
(Domestic conferences in Japanese):
2000-present
Ten oral presentations in
domestic conferences.
Patents:
T. Yasuda, D. Hojo, Patent No. 4102881 (Japan Patent Right).
Awards and
Honors:
2002-2003: The Japan Scholarship Foundation
scholarship.