発表論文及び国際学会Proceedingsリスト

目次

主要論文のcitation数データ (ISI Web of Knowledge V5.25.1)  (総引用回数 13088) (個人h-index 51、第1機関h-index 42)

(1) 本研究室が1stAuthorの論文

Rank Times Cited Title, Journal
1. 1032 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Spontaneous emission of localized excitons in InGaN single and multi-quantum well structures",
Applied Physics Letters 69 (27), pp.4188-4190 (1996).
2. 425 S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota:
"Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors",
Nature Materials 5 (10), pp.810-816 (2006).
3. 360 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Luminescences from localized states in InGaN epilayers",
Applied Physics Letters 70 (21), pp.2822-2824 (1997).
4. 358 S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota:
"Effective bandgap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures",
Applied Physics Letters 73 (14), pp.2006-2008 (1998).
5. 332 S. Chichibu, K. Wada, and S. Nakamura:
"Spatially-resolved cathodoluminescence spectra of InGaN quantum wells",
Applied Physics Letters 71 (16), pp.2346-2348 (1997).
6. 215 S. Chichibu, T. Sota, K. Wada, and S. Nakamura:
"Exciton localization in InGaN quantum well devices",
Journal of Vacuum Science and Technology B 16 (4), pp.2204-2214 (1998).
7. 182 T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma:
"Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO",
Applied Physics Letters 82 (4), pp.532-534 (2003).
8. 153 S. F. Chichibu, H. Marchand, M. S. Minski, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura:
"Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth",
Applied Physics Letters 74 (10), pp.1460-1462 (1999).
9. 145 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Excitonic emissions from hexagonal GaN epitaxial layers",
Journal of Applied Physics 79 (5), pp.2784-2786 (1996).
10. 133 S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura:
"Optical properties of InGaN quantum wells",
Materials Science and Engineering B 59, pp.298-306 (1999).

(2)共同研究先が1stAuthorの論文

Rank Times Cited Title, Journal
1. 1633 A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki:
"Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO",
Nature Materials 4 (1), pp.42-46 (2005).
2. 340 A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki:
"Blue light-emitting diode based on ZnO",
Japanese Journal of Applied Physics 44, Part 2, pp.L643-L645 (2005).
3. 224 A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura:
"Biaxial strain dependence of exciton resonance energies in wurtzite GaN",
Journal of Applied Physics 81 (1), pp.417-424 (1997).
4. 164 J. S. Speck and S. F. Chichibu:
"Nonpolar and Semipolar Group III Nitride-Based Materials",
MRS Bulletin 34 (5), pp.304-309 (2009).
5. 149 H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida:
"Growth and Characterization of cubic GaN",
Journal of Crystal Growth 178 (1-2), pp.113-133 (1997).
6. 138 K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A.Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates",
Applied Physics Letters 97 (1), pp.013501 1-3 (2010).
7. 137 K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu:
"Continuous-Wave Operation of m-plane InGaN Multiple Quantum Well Laser Diodes",
Japanese Journal of Applied Physics 46, Part 2 (9), pp. L187-L189 (2007).
8. 136 T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura:
"Quatum-confined Stark effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure",
Japanese Journal of Applied Physics 38, Part 2 (8B), pp. L914-L916 (1999).
9. 102 M.Yamaguchi, T.Yagi, T.Azuhata, T.Sota, K.Suzuki, S.Chichibu, and S.Nakamura:
"Brillouin Scattering Study of Gallium Nitride : Elastic Stiffness Constants",
Journal of Physics: Condensed Matter 9, pp.241-248 (1997).
10. 91 A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. Chichibu, and H. Koinuma:
"Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam",
Journal of Applied Physics 93 (5), pp.2481-2485 (2003).

(3) 参考(著書)

Rank Times Cited Title, Journal
1. 449 S. Nakamura and S. F. Chichibu:
"Introduction to Nitride Semiconductor Blue Lasers and Light emitting Diodes",
(Taylor and Francis, London and New York, 2000) ISBN 0-7484-0836-3.